IXFN170N65X2 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 650V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
Description: MOSFET N-CH 650V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3797.53 грн |
10+ | 3324.89 грн |
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Технічний опис IXFN170N65X2 Littelfuse Inc.
Description: LITTELFUSE - IXFN170N65X2 - MOSFET, N-CH, 650V, 170A, SOT-227, tariffCode: 0, Transistormontage: Module, Drain-Source-Spannung Vds: 650V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 170A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 1.17kW, Bauform - Transistor: SOT-227, Anzahl der Pins: 4Pin(s), Produktpalette: HiPERFET X2 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: N Channel, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.013ohm, directShipCharge: 25, SVHC: No SVHC (17-Dec-2014).
Інші пропозиції IXFN170N65X2 за ціною від 2958.61 грн до 4298.84 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IXFN170N65X2 | Виробник : IXYS | Discrete Semiconductor Modules 650V/170A miniBLOC SOT-227 |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IXFN170N65X2 | Виробник : LITTELFUSE |
Description: LITTELFUSE - IXFN170N65X2 - MOSFET, N-CH, 650V, 170A, SOT-227 tariffCode: 0 Transistormontage: Module Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 170A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 1.17kW Bauform - Transistor: SOT-227 Anzahl der Pins: 4Pin(s) Produktpalette: HiPERFET X2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.013ohm directShipCharge: 25 SVHC: No SVHC (17-Dec-2014) |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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IXFN170N65X2 | Виробник : Littelfuse | Trans MOSFET N-CH 650V 170A 4-Pin SOT-227B |
товар відсутній |
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IXFN170N65X2 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 170A Pulsed drain current: 340A Power dissipation: 1170W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 13mΩ Gate charge: 434nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 270ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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IXFN170N65X2 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 170A Pulsed drain current: 340A Power dissipation: 1170W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 13mΩ Gate charge: 434nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 270ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |