на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2781.8 грн |
10+ | 2443.65 грн |
100+ | 1855.76 грн |
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Технічний опис IXFN32N100P IXYS
Description: MOSFET N-CH 1000V 27A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V.
Інші пропозиції IXFN32N100P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN32N100P | Виробник : Littelfuse | Trans MOSFET N-CH 1KV 27A 4-Pin SOT-227B |
товар відсутній |
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IXFN32N100P | Виробник : Littelfuse | Trans MOSFET N-CH 1KV 27A 4-Pin SOT-227B |
товар відсутній |
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IXFN32N100P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 27A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 75A Power dissipation: 690W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 225nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw кількість в упаковці: 1 шт |
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IXFN32N100P | Виробник : IXYS |
Description: MOSFET N-CH 1000V 27A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V |
товар відсутній |
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IXFN32N100P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 27A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 75A Power dissipation: 690W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 225nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
товар відсутній |