на замовлення 92 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2384.94 грн |
| 10+ | 2089.06 грн |
| 100+ | 1588.92 грн |
| 200+ | 1464.08 грн |
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Технічний опис IXFN420N10T IXYS
Description: MOSFET N-CH 100V 420A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V, Power Dissipation (Max): 1070W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V.
Інші пропозиції IXFN420N10T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN420N10T | Виробник : Littelfuse |
 Trans MOSFET N-CH 100V 420A 4-Pin SOT-227B |
товар відсутній |
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IXFN420N10T | Виробник : Littelfuse |
Trans MOSFET N-CH 100V 420A 4-Pin SOT-227B |
товар відсутній |
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IXFN420N10T | Виробник : Littelfuse |
Trans MOSFET N-CH 100V 420A 4-Pin SOT-227B |
товар відсутній |
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IXFN420N10T | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA Technology: GigaMOS™; HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Pulsed drain current: 1kA Power dissipation: 1.07kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.3mΩ Gate charge: 670nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 140ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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IXFN420N10T | Виробник : IXYS |
Description: MOSFET N-CH 100V 420A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V Power Dissipation (Max): 1070W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V |
товар відсутній |
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IXFN420N10T | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA Technology: GigaMOS™; HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Pulsed drain current: 1kA Power dissipation: 1.07kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.3mΩ Gate charge: 670nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 140ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |