IXFQ24N50P2 IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис IXFQ24N50P2 IXYS
Description: MOSFET N-CH 500V 24A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V.
Інші пропозиції IXFQ24N50P2
| Фото | Назва | Виробник | Інформація |
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IXFQ24N50P2 | Виробник : IXYS |
Description: MOSFET N-CH 500V 24A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V |
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| IXFQ24N50P2 | Виробник : IXYS |
MOSFET |
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IXFQ24N50P2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 480W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced |
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