IXFT320N10T2 IXYS
Виробник: IXYS
Description: MOSFET N-CH 100V 320A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Description: MOSFET N-CH 100V 320A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1394.52 грн |
30+ | 1087 грн |
120+ | 1023.05 грн |
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Технічний опис IXFT320N10T2 IXYS
Description: MOSFET N-CH 100V 320A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V.
Інші пропозиції IXFT320N10T2 за ціною від 901.95 грн до 1487.66 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXFT320N10T2 | Виробник : IXYS | MOSFET Trench T2 HiperFET Power MOSFET |
на замовлення 1525 шт: термін постачання 21-30 дні (днів) |
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IXFT320N10T2 | Виробник : Littelfuse | Trans MOSFET N-CH 100V 320A 3-Pin(2+Tab) TO-268 |
товар відсутній |
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IXFT320N10T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO268 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 430nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 98ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFT320N10T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO268 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 430nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 98ns |
товар відсутній |