IXFX120N20 Littelfuse


media.pdf Виробник: Littelfuse
Trans MOSFET N-CH Si 200V 120A 3-Pin(3+Tab) PLUS 247
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Технічний опис IXFX120N20 Littelfuse

Description: MOSFET N-CH 200V 120A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 4V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V.

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IXFX120N20 IXFX120N20 Виробник : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_120n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 120A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
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IXFX120N20 IXFX120N20 Виробник : IXYS media-3320591.pdf MOSFET 200V 120A
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