Продукція > LITTELFUSE > IXFX200N10P

IXFX200N10P Littelfuse

Name: IXFX200N10P
Brand: IXYS
SKU: 455278747-1
Price: 874.74 UAH
Availability: BackOrder

te_mosfets_n-channel_hiperfets_ixf_200n10p_datasheet.pdf.pdf

Виробник: Littelfuse
Trans MOSFET N-CH 100V 200A 3-Pin(3+Tab) PLUS 247

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Технічний опис IXFX200N10P Littelfuse

Description: MOSFET N-CH 100V 200A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V.

Інші пропозиції IXFX200N10P

Назва	Виробник	Інформація	Доступність
IXFX200N10P	Виробник : IXYS	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 830W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт	товар відсутній
IXFX200N10P	Виробник : Littelfuse Inc.	Description: MOSFET N-CH 100V 200A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V	товар відсутній
IXFX200N10P	Виробник : IXYS	MOSFET 200 Amps 100V 0.0075 Rds	товар відсутній
IXFX200N10P	Виробник : IXYS	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 830W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced	товар відсутній