IXFX64N60Q3 IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_64n60q3_datasheet.pdf.pdf

Виробник: IXYS
Description: MOSFET N-CH 600V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9930 pF @ 25 V

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Технічний опис IXFX64N60Q3 IXYS

Description: MOSFET N-CH 600V 64A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9930 pF @ 25 V.

Інші пропозиції IXFX64N60Q3

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	IXFX64N60Q3	Виробник : IXYS	MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A	товар відсутній
	IXFX64N60Q3	Виробник : IXYS	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1250W Case: PLUS247™ On-state resistance: 95mΩ Mounting: THT Gate charge: 190nC Kind of package: tube Kind of channel: enhanced	товар відсутній