Продукція > LITTELFUSE > IXGR55N120A3H1
IXGR55N120A3H1

IXGR55N120A3H1 Littelfuse


media.pdf Виробник: Littelfuse
Trans IGBT Chip N-CH 1200V 70A 200000mW 3-Pin(3+Tab) ISOPLUS 247
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IXGR55N120A3H1 Littelfuse

Description: IGBT 1200V 70A 200W ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 23ns/365ns, Switching Energy: 5.1mJ (on), 13.3mJ (off), Test Condition: 960V, 55A, 3Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 330 A, Power - Max: 200 W.

Інші пропозиції IXGR55N120A3H1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IXGR55N120A3H1 IXGR55N120A3H1 Виробник : IXYS IXGR55N120A3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
товар відсутній
IXGR55N120A3H1 IXGR55N120A3H1 Виробник : IXYS littelfuse_discrete_igbts_pt_ixgr55n120a3h1_datasheet.pdf.pdf Description: IGBT 1200V 70A 200W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 200 W
товар відсутній
IXGR55N120A3H1 IXGR55N120A3H1 Виробник : IXYS media-3319791.pdf IGBT Transistors High Frequency Range 40khz C-IGBT w/Diode
товар відсутній
IXGR55N120A3H1 IXGR55N120A3H1 Виробник : IXYS IXGR55N120A3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній