IXTF200N10T IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 156W
Case: ISOPLUS i4-pac™ x024d
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 156W
Case: ISOPLUS i4-pac™ x024d
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
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Технічний опис IXTF200N10T IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 90A, Power dissipation: 156W, Case: ISOPLUS i4-pac™ x024d, On-state resistance: 7mΩ, Mounting: THT, Gate charge: 152nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: thrench gate power mosfet, Reverse recovery time: 76ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTF200N10T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTF200N10T | Виробник : IXYS | Description: MOSFET N-CH 100V 90A I4-PAC-5 |
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IXTF200N10T | Виробник : IXYS | MOSFET 200 Amps 100V 5.4 Rds |
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IXTF200N10T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 156W Case: ISOPLUS i4-pac™ x024d On-state resistance: 7mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns |
товар відсутній |