Технічний опис IXTF2N300P3 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W, Mounting: THT, Case: ISOPLUS i4-pac™ x024c, Polarisation: unipolar, Drain-source voltage: 3kV, Reverse recovery time: 400ns, Kind of package: tube, Drain current: 1.6A, Features of semiconductor devices: standard power mosfet, Gate charge: 73nC, Technology: Polar3™, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 6A, On-state resistance: 21Ω, Type of transistor: N-MOSFET, Power dissipation: 160W, кількість в упаковці: 1 шт.
Інші пропозиції IXTF2N300P3
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IXTF2N300P3 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W Mounting: THT Case: ISOPLUS i4-pac™ x024c Polarisation: unipolar Drain-source voltage: 3kV Reverse recovery time: 400ns Kind of package: tube Drain current: 1.6A Features of semiconductor devices: standard power mosfet Gate charge: 73nC Technology: Polar3™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 160W кількість в упаковці: 1 шт |
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| IXTF2N300P3 | Виробник : IXYS |
MOSFET DISC MSFT N-CH STD-POLAR3 |
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IXTF2N300P3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W Mounting: THT Case: ISOPLUS i4-pac™ x024c Polarisation: unipolar Drain-source voltage: 3kV Reverse recovery time: 400ns Kind of package: tube Drain current: 1.6A Features of semiconductor devices: standard power mosfet Gate charge: 73nC Technology: Polar3™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 160W |
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