IXTK100N25P IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Mounting: THT
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Mounting: THT
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: PolarHT™
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 897.28 грн |
2+ | 593.08 грн |
4+ | 560.73 грн |
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Технічний опис IXTK100N25P IXYS
Description: MOSFET N-CH 250V 100A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.
Інші пропозиції IXTK100N25P за ціною від 672.88 грн до 1076.74 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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IXTK100N25P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264 Mounting: THT Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: PolarHT™ кількість в упаковці: 1 шт |
на замовлення 251 шт: термін постачання 7-14 дні (днів) |
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IXTK100N25P | Виробник : Littelfuse | Trans MOSFET N-CH 250V 100A 3-Pin(3+Tab) TO-264 |
товар відсутній |
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IXTK100N25P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 250V 100A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V |
товар відсутній |
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IXTK100N25P | Виробник : IXYS | MOSFET 100 Amps 250V 0.027 Rds |
товар відсутній |