IXTN170P10P IXYS
Виробник: IXYS
Description: MOSFET P-CH 100V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Description: MOSFET P-CH 100V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 216 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2637.51 грн |
10+ | 2256.65 грн |
100+ | 1973.78 грн |
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Технічний опис IXTN170P10P IXYS
Description: LITTELFUSE - IXTN170P10P - MOSFET, P-CH, 100V, 170A, SOT-227, tariffCode: 0, Transistormontage: Module, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 170A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 890W, Bauform - Transistor: SOT-227, Anzahl der Pins: 4Pin(s), Produktpalette: PolarP Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: P Channel, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.014ohm, directShipCharge: 25, SVHC: No SVHC (17-Dec-2014).
Інші пропозиції IXTN170P10P за ціною від 1645.96 грн до 2962.81 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXTN170P10P | Виробник : IXYS | Discrete Semiconductor Modules -170.0 Amps -100V 0.012 Rds |
на замовлення 213 шт: термін постачання 21-30 дні (днів) |
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IXTN170P10P | Виробник : LITTELFUSE |
Description: LITTELFUSE - IXTN170P10P - MOSFET, P-CH, 100V, 170A, SOT-227 tariffCode: 0 Transistormontage: Module Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 890W Bauform - Transistor: SOT-227 Anzahl der Pins: 4Pin(s) Produktpalette: PolarP Series productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.014ohm directShipCharge: 25 SVHC: No SVHC (17-Dec-2014) |
на замовлення 316 шт: термін постачання 21-31 дні (днів) |
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IXTN170P10P | Виробник : Littelfuse | Trans MOSFET P-CH 100V 170A 4-Pin SOT-227B |
товар відсутній |
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IXTN170P10P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A Type of module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Gate charge: 240nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -510A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 176ns Drain-source voltage: -100V Drain current: -170A On-state resistance: 14mΩ Power dissipation: 890W Polarisation: unipolar кількість в упаковці: 300 шт |
товар відсутній |
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IXTN170P10P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A Type of module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Gate charge: 240nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -510A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 176ns Drain-source voltage: -100V Drain current: -170A On-state resistance: 14mΩ Power dissipation: 890W Polarisation: unipolar |
товар відсутній |