IXTN550N055T2 IXYS
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3119.49 грн |
| 10+ | 2740.49 грн |
| 20+ | 2240.32 грн |
| 50+ | 2166.27 грн |
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Технічний опис IXTN550N055T2 IXYS
Description: MOSFET N-CH 55V 550A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.
Інші пропозиції IXTN550N055T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTN550N055T2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 55V 550A 4-Pin SOT-227B |
товар відсутній |
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IXTN550N055T2 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 1.65kA Power dissipation: 940W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 1.3mΩ Gate charge: 595nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 100ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN550N055T2 | Виробник : IXYS |
Description: MOSFET N-CH 55V 550A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 940W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V |
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IXTN550N055T2 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 1.65kA Power dissipation: 940W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 1.3mΩ Gate charge: 595nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 100ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |