IXTN90P20P IXYS
Виробник: IXYS
Description: MOSFET P-CH 200V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Description: MOSFET P-CH 200V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2503.42 грн |
10+ | 2142.16 грн |
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Технічний опис IXTN90P20P IXYS
Description: MOSFET P-CH 200V 90A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Інші пропозиції IXTN90P20P за ціною від 1811.43 грн до 2774.38 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IXTN90P20P | Виробник : IXYS | Discrete Semiconductor Modules -90.0 Amps -200V 0.044 Rds |
на замовлення 759 шт: термін постачання 21-30 дні (днів) |
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IXTN90P20P | Виробник : Littelfuse | Trans MOSFET P-CH 200V 90A 4-Pin SOT-227B |
товар відсутній |
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IXTN90P20P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Case: SOT227B Polarisation: unipolar On-state resistance: 44mΩ Drain current: -90A Drain-source voltage: -200V Electrical mounting: screw Type of module: MOSFET transistor Gate charge: 205nC Reverse recovery time: 315ns Semiconductor structure: single transistor Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -270A Mechanical mounting: screw Power dissipation: 890W кількість в упаковці: 300 шт |
товар відсутній |
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IXTN90P20P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Case: SOT227B Polarisation: unipolar On-state resistance: 44mΩ Drain current: -90A Drain-source voltage: -200V Electrical mounting: screw Type of module: MOSFET transistor Gate charge: 205nC Reverse recovery time: 315ns Semiconductor structure: single transistor Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -270A Mechanical mounting: screw Power dissipation: 890W |
товар відсутній |