Технічний опис IXTP102N15T Littelfuse
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 102A, Power dissipation: 455W, Case: TO220AB, On-state resistance: 18mΩ, Mounting: THT, Gate charge: 87nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: thrench gate power mosfet, Reverse recovery time: 97ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTP102N15T
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IXTP102N15T | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 97ns кількість в упаковці: 1 шт |
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IXTP102N15T | Виробник : IXYS |
Description: MOSFET N-CH 150V 102A TO-220 |
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IXTP102N15T | Виробник : IXYS |
MOSFET 102 Amps 150V 18 Rds |
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IXTP102N15T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 97ns |
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