IXTP86N20T IXYS
Виробник: IXYS
Description: MOSFET N-CH 200V 86A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 200V 86A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 412.09 грн |
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Технічний опис IXTP86N20T IXYS
Description: MOSFET N-CH 200V 86A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.
Інші пропозиції IXTP86N20T за ціною від 229.81 грн до 447.66 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IXTP86N20T | Виробник : IXYS | MOSFET 86 Amps 200V 29 Rds |
на замовлення 857 шт: термін постачання 21-30 дні (днів) |
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IXTP86N20T | Виробник : Littelfuse | Trans MOSFET N-CH 200V 86A 3-Pin(3+Tab) TO-220 |
товар відсутній |
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IXTP86N20T | Виробник : Littelfuse | Trans MOSFET N-CH 200V 86A 3-Pin(3+Tab) TO-220 |
товар відсутній |
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IXTP86N20T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO220AB; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 86A Power dissipation: 550W Case: TO220AB On-state resistance: 33mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 140ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTP86N20T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO220AB; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 86A Power dissipation: 550W Case: TO220AB On-state resistance: 33mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 140ns |
товар відсутній |