IXTR210P10T IXYS
Виробник: IXYS
Description: MOSFET P-CH 100V 195A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
Description: MOSFET P-CH 100V 195A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
300+ | 1610.33 грн |
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Технічний опис IXTR210P10T IXYS
Description: MOSFET P-CH 100V 195A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V.
Інші пропозиції IXTR210P10T за ціною від 1526.47 грн до 2142.52 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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IXTR210P10T | Виробник : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Technology: TrenchP™ Mounting: THT Reverse recovery time: 200ns Case: ISOPLUS247™ Kind of package: tube Power dissipation: 390W Drain-source voltage: -100V Drain current: -195A On-state resistance: 8mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 740nC Kind of channel: enhanced Gate-source voltage: ±15V |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXTR210P10T | Виробник : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Technology: TrenchP™ Mounting: THT Reverse recovery time: 200ns Case: ISOPLUS247™ Kind of package: tube Power dissipation: 390W Drain-source voltage: -100V Drain current: -195A On-state resistance: 8mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 740nC Kind of channel: enhanced Gate-source voltage: ±15V кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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IXTR210P10T | Виробник : IXYS | MOSFET TrenchP Channel Power MOSFETs |
товар відсутній |