IXTT2N300P3HV Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 3000V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 3000 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Description: MOSFET N-CH 3000V 2A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 3000 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3481.09 грн |
30+ | 2808.83 грн |
120+ | 2621.58 грн |
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Технічний опис IXTT2N300P3HV Littelfuse Inc.
Description: MOSFET N-CH 3000V 2A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V.
Інші пропозиції IXTT2N300P3HV за ціною від 2639.06 грн до 3727.85 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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IXTT2N300P3HV | Виробник : IXYS | MOSFET MSFT N-CH STD-POLAR3 |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXTT2N300P3HV | Виробник : Littelfuse | Power Mosfet |
товар відсутній |
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IXTT2N300P3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns Mounting: SMD Case: TO268HV Polarisation: unipolar Drain-source voltage: 3kV Reverse recovery time: 400ns Kind of package: tube Drain current: 2A Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 520W кількість в упаковці: 1 шт |
товар відсутній |
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IXTT2N300P3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns Mounting: SMD Case: TO268HV Polarisation: unipolar Drain-source voltage: 3kV Reverse recovery time: 400ns Kind of package: tube Drain current: 2A Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 520W |
товар відсутній |