на замовлення 552 шт:
термін постачання 301-310 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 911.36 грн |
| 10+ | 897.58 грн |
| 30+ | 666.25 грн |
| 60+ | 654.29 грн |
| 120+ | 613.11 грн |
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Технічний опис IXTT48P20P IXYS
Description: MOSFET P-CH 200V 48A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V, Power Dissipation (Max): 462W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V.
Інші пропозиції IXTT48P20P
| Фото | Назва | Виробник | Інформація |
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IXTT48P20P | Виробник : Littelfuse |
 Trans MOSFET P-CH 200V 48A 3-Pin(2+Tab) D3PAK |
товар відсутній |
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IXTT48P20P | Виробник : Littelfuse |
Trans MOSFET P-CH 200V 48A 3-Pin(2+Tab) D3PAK |
товар відсутній |
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IXTT48P20P | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 85mΩ Drain current: -48A Drain-source voltage: -200V Gate charge: 103nC Reverse recovery time: 260ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 462W кількість в упаковці: 1 шт |
товар відсутній |
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IXTT48P20P | Виробник : IXYS |
Description: MOSFET P-CH 200V 48A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
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IXTT48P20P | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 85mΩ Drain current: -48A Drain-source voltage: -200V Gate charge: 103nC Reverse recovery time: 260ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 462W |
товар відсутній |