IXTT6N150 IXYS
Виробник: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us
Drain-source voltage: 1.5kV
Drain current: 6A
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Reverse recovery time: 1.5µs
кількість в упаковці: 1 шт
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Технічний опис IXTT6N150 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us, Drain-source voltage: 1.5kV, Drain current: 6A, Type of transistor: N-MOSFET, Power dissipation: 540W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: standard power mosfet, Gate charge: 67nC, Kind of channel: enhanced, Mounting: SMD, Case: TO268, Reverse recovery time: 1.5µs, кількість в упаковці: 1 шт.
Інші пропозиції IXTT6N150
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IXTT6N150 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us Drain-source voltage: 1.5kV Drain current: 6A Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 67nC Kind of channel: enhanced Mounting: SMD Case: TO268 Reverse recovery time: 1.5µs |
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