IXTX1R4N450HV IXYS
Виробник: IXYSDescription: MOSFET N-CH 4500V 1.4A TO247PLUS
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-247PLUS-HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4539.07 грн |
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Технічний опис IXTX1R4N450HV IXYS
Description: MOSFET N-CH 4500V 1.4A TO247PLUS, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: TO-247PLUS-HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4500 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.
Інші пропозиції IXTX1R4N450HV за ціною від 3628.84 грн до 4976.84 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTX1R4N450HV | Виробник : IXYS |
MOSFET MSFT N-CH STD-VERY HI VOLTAGE |
на замовлення 344 шт: термін постачання 21-30 дні (днів) |
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| IXTX1R4N450HV | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 5A Power dissipation: 960W Case: TO247PLUS-HV Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns кількість в упаковці: 1 шт |
товар відсутній |
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| IXTX1R4N450HV | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 5A Power dissipation: 960W Case: TO247PLUS-HV Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns |
товар відсутній |