IXTX3N250L IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис IXTX3N250L IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns, Case: PLUS247™, Mounting: THT, Kind of package: tube, Drain-source voltage: 2.5kV, Type of transistor: N-MOSFET, On-state resistance: 10Ω, Reverse recovery time: 370ns, Power dissipation: 417W, Gate charge: 230nC, Polarisation: unipolar, Features of semiconductor devices: linear power mosfet, Drain current: 3A, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції IXTX3N250L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXTX3N250L | Виробник : IXYS | MOSFET MOSFET DISCRETE TO-247P |
товар відсутній |
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IXTX3N250L | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns Case: PLUS247™ Mounting: THT Kind of package: tube Drain-source voltage: 2.5kV Type of transistor: N-MOSFET On-state resistance: 10Ω Reverse recovery time: 370ns Power dissipation: 417W Gate charge: 230nC Polarisation: unipolar Features of semiconductor devices: linear power mosfet Drain current: 3A Kind of channel: enhanced |
товар відсутній |