на замовлення 9 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6213.69 грн |
| 10+ | 5818.6 грн |
| 30+ | 4926.14 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTX4N300P3HV IXYS
Description: MOSFET N-CH 3000V 4A TO247PLUSHV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 12.5Ohm @ 2A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247PLUS-HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V.
Інші пропозиції IXTX4N300P3HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IXTX4N300P3HV | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns Mounting: THT Case: TO247PLUS-HV Power dissipation: 960W Gate charge: 139nC Polarisation: unipolar Technology: Polar3™ Features of semiconductor devices: standard power mosfet Drain current: 4A Kind of channel: enhanced Drain-source voltage: 3kV Type of transistor: N-MOSFET Kind of package: tube Reverse recovery time: 420ns кількість в упаковці: 1 шт |
товар відсутній |
||
 |
IXTX4N300P3HV | Виробник : IXYS |
Description: MOSFET N-CH 3000V 4A TO247PLUSHV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 12.5Ohm @ 2A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247PLUS-HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 3000 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V |
товар відсутній |
|
| IXTX4N300P3HV | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns Mounting: THT Case: TO247PLUS-HV Power dissipation: 960W Gate charge: 139nC Polarisation: unipolar Technology: Polar3™ Features of semiconductor devices: standard power mosfet Drain current: 4A Kind of channel: enhanced Drain-source voltage: 3kV Type of transistor: N-MOSFET Kind of package: tube Reverse recovery time: 420ns |
товар відсутній |