на замовлення 882 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1448.41 грн |
| 10+ | 1287.93 грн |
| 30+ | 1090.05 грн |
| 60+ | 1044.21 грн |
| 120+ | 999.71 грн |
| 510+ | 912.03 грн |
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Технічний опис IXTX90P20P IXYS
Description: MOSFET P-CH 200V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Інші пропозиції IXTX90P20P
| Фото | Назва | Виробник | Інформація |
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IXTX90P20P | Виробник : Littelfuse |
 Trans MOSFET P-CH 200V 90A 3-Pin(3+Tab) PLUS 247 |
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IXTX90P20P | Виробник : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Mounting: THT Case: PLUS247™ Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 44mΩ Drain current: -90A Drain-source voltage: -200V Gate charge: 205nC Reverse recovery time: 315ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 890W кількість в упаковці: 1 шт |
товар відсутній |
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IXTX90P20P | Виробник : IXYS |
Description: MOSFET P-CH 200V 90A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
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IXTX90P20P | Виробник : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Mounting: THT Case: PLUS247™ Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 44mΩ Drain current: -90A Drain-source voltage: -200V Gate charge: 205nC Reverse recovery time: 315ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 890W |
товар відсутній |