IXTY15P15T IXYS
Виробник: IXYS
Description: MOSFET P-CH 150V 15A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Description: MOSFET P-CH 150V 15A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
на замовлення 3224 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 272.34 грн |
70+ | 207.34 грн |
140+ | 177.72 грн |
560+ | 148.25 грн |
1050+ | 126.94 грн |
2030+ | 119.53 грн |
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Технічний опис IXTY15P15T IXYS
Description: MOSFET P-CH 150V 15A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V.
Інші пропозиції IXTY15P15T за ціною від 152.14 грн до 291.37 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IXTY15P15T | Виробник : IXYS | MOSFET TrenchP Power MOSFET |
на замовлення 593 шт: термін постачання 21-30 дні (днів) |
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IXTY15P15T | Виробник : Littelfuse | Trans MOSFET P-CH 150V 15A 3-Pin(2+Tab) DPAK |
товар відсутній |
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IXTY15P15T | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -15A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 116ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTY15P15T | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -15A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 116ns |
товар відсутній |