LGE3M80120J LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 20.8nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -3...15V
Mounting: SMD
Case: D2PAK-7
Drain-source voltage: 1.2kV
Drain current: 23A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
кількість в упаковці: 1 шт
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Технічний опис LGE3M80120J LUGUANG ELECTRONIC
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7, Polarisation: unipolar, Kind of package: reel; tape, Features of semiconductor devices: Kelvin terminal, Gate charge: 20.8nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -3...15V, Mounting: SMD, Case: D2PAK-7, Drain-source voltage: 1.2kV, Drain current: 23A, On-state resistance: 96mΩ, Type of transistor: N-MOSFET, Power dissipation: 136W, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M80120J
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LGE3M80120J | Виробник : LUGUANG ELECTRONIC |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7 Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: Kelvin terminal Gate charge: 20.8nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -3...15V Mounting: SMD Case: D2PAK-7 Drain-source voltage: 1.2kV Drain current: 23A On-state resistance: 96mΩ Type of transistor: N-MOSFET Power dissipation: 136W |
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