Технічний опис MC1413BDR2 ON
Description: TRANS 7NPN DARL 50V 0.5A 16SO, Packaging: Tape & Reel (TR), Package / Case: 16-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 7 NPN Darlington, Operating Temperature: 150°C (TJ), Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V, Supplier Device Package: 16-SOIC, Part Status: Obsolete.
Інші пропозиції MC1413BDR2
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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MC1413BDR2 | Виробник : onsemi |
 Description: TRANS 7NPN DARL 50V 0.5A 16SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 7 NPN Darlington Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Supplier Device Package: 16-SOIC Part Status: Obsolete |
товар відсутній |
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MC1413BDR2 | Виробник : onsemi |
Description: TRANS 7NPN DARL 50V 0.5A 16SO Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 7 NPN Darlington Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Supplier Device Package: 16-SOIC Part Status: Obsolete |
товар відсутній |