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MIXA80W1200TEH IXYS


MIXA80W1200TEH.pdf Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
кількість в упаковці: 1 шт
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Технічний опис MIXA80W1200TEH IXYS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: motors; photovoltaics, Topology: IGBT three-phase bridge; NTC thermistor, Power dissipation: 390W, Technology: Sonic FRD™; XPT™, Mechanical mounting: screw, Pulsed collector current: 225A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: transistor/transistor, Case: E3-Pack, Gate-emitter voltage: ±20V, Collector current: 84A, кількість в упаковці: 1 шт.

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MIXA80W1200TEH Виробник : IXYS MIXA80W1200TEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
товар відсутній