Технічний опис MJD253T4 ON Semiconductor
Description: TRANS PWR PNP 4A 100V DPAK, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V, Frequency - Transition: 40MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 12.5 W.
Інші пропозиції MJD253T4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MJD253T4 | Виробник : ON Semiconductor |
 Trans GP BJT PNP 100V 4A 1400mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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MJD253T4 | Виробник : onsemi |
Description: TRANS PWR PNP 4A 100V DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Frequency - Transition: 40MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 12.5 W |
товар відсутній |