Технічний опис MJD2955-T4 ON
Description: TRANS PWR PNP 10A 60V DPAK, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V, Frequency - Transition: 2MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 20 W.
Інші пропозиції MJD2955-T4
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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MJD2955T4 | Виробник : STMicroelectronics |
 Trans GP BJT PNP 60V 10A 20000mW 3-Pin(2+Tab) DPAK T/R |
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MJD2955T4 | Виробник : onsemi |
Description: TRANS PWR PNP 10A 60V DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 20 W |
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MJD2955T4 | Виробник : STMicroelectronics |
Description: TRANS PNP 60V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 20 W |
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MJD2955T4 | Виробник : STMicroelectronics |
Description: TRANS PNP 60V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 20 W |
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MJD2955T4 | Виробник : STMicroelectronics |
Bipolar Transistors - BJT PNP Gen Pur Switch |
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MJD2955T4 | Виробник : onsemi |
Bipolar Transistors - BJT 10A 60V 20W PNP |
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| MJD2955T4 | Виробник : Diodes Incorporated |
Bipolar Transistors - BJT |
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