Технічний опис MJE15032 ON Semiconductor
Description: TRANS NPN 250V 8A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-220, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 50 W.
Інші пропозиції MJE15032
Фото | Назва | Виробник | Інформація |
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MJE15032 | Виробник : onsemi |
Description: TRANS NPN 250V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 50 W |
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MJE15032 | Виробник : onsemi | Bipolar Transistors - BJT 8A 250V 50W NPN |
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MJE15032 | Виробник : Diodes Incorporated | Bipolar Transistors - BJT |
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