Технічний опис MJE200TSTU ON Semiconductor
Description: TRANS NPN 25V 5A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V, Frequency - Transition: 65MHz, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 15 W.
Інші пропозиції MJE200TSTU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MJE200TSTU | Виробник : onsemi |
Description: TRANS NPN 25V 5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 15 W |
товар відсутній |