MJE350STU

MJE350STU ON Semiconductor


mje350cn-d.pdf Виробник: ON Semiconductor
Trans GP BJT PNP 300V 0.5A 20000mW 3-Pin(3+Tab) TO-126 Tube
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Технічний опис MJE350STU ON Semiconductor

Description: TRANS PNP 300V 0.5A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 20 W.

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MJE350STU MJE350STU Виробник : onsemi mje350-d.pdf Description: TRANS PNP 300V 0.5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
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MJE350STU MJE350STU Виробник : ON Semiconductor / Fairchild MJE350_D-1811352.pdf Bipolar Transistors - BJT PNP Epitaxial Sil
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