MJE5851

MJE5851 onsemi


mje5850-d.pdf Виробник: onsemi
Description: TRANS PNP 350V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 80 W
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Технічний опис MJE5851 onsemi

Description: TRANS PNP 350V 8A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V, Supplier Device Package: TO-220, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 80 W.

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MJE5851 MJE5851 Виробник : ON Semiconductor MJE5850_D-1811559.pdf Bipolar Transistors - BJT 8A 350V 80W PNP
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