MMIX1X200N60B3H1 IXYS
Виробник: IXYS
Description: IGBT 600V 175A 520W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
Description: IGBT 600V 175A 520W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3520.17 грн |
10+ | 3162.63 грн |
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Технічний опис MMIX1X200N60B3H1 IXYS
Description: IGBT 600V 175A 520W SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: 24-SMPD, Td (on/off) @ 25°C: 48ns/160ns, Switching Energy: 2.85mJ (on), 2.9mJ (off), Test Condition: 360V, 100A, 1Ohm, 15V, Gate Charge: 315 nC, Part Status: Active, Current - Collector (Ic) (Max): 175 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 1000 A, Power - Max: 520 W.
Інші пропозиції MMIX1X200N60B3H1 за ціною від 2256.48 грн до 3568.73 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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MMIX1X200N60B3H1 | Виробник : IXYS | IGBT Transistors SMPD IGBTs Power Device |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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MMIX1X200N60B3H1 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD Pulsed collector current: 1kA Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 520W Kind of package: tube Gate charge: 315nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 72A кількість в упаковці: 1 шт |
товар відсутній |
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MMIX1X200N60B3H1 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD Pulsed collector current: 1kA Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 520W Kind of package: tube Gate charge: 315nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 72A |
товар відсутній |