на замовлення 135 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6660.07 грн |
| 10+ | 6366.32 грн |
Відгуки про товар
Написати відгук
Технічний опис MMIX4B22N300 IXYS
Description: IGBT TRANS 3000V 38A, Packaging: Tube, Package / Case: 24-SMD Module, 9 Leads, Mounting Type: Surface Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A, NTC Thermistor: No, Supplier Device Package: 24-SMPD, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 3000 V, Power - Max: 150 W, Current - Collector Cutoff (Max): 35 µA, Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V.
Інші пропозиції MMIX4B22N300
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MMIX4B22N300 | Виробник : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT x4; BiMOSFET™; 3kV; 22A; 150W; SMPD Case: SMPD Topology: H-bridge Mounting: SMD Power dissipation: 150W Technology: BiMOSFET™ Gate charge: 110nC Kind of package: tube Features of semiconductor devices: high voltage Collector current: 22A Collector-emitter voltage: 3kV Pulsed collector current: 165A Type of transistor: IGBT x4 Turn-on time: 743ns Turn-off time: 1.87µs Gate-emitter voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
||
 |
MMIX4B22N300 | Виробник : Littelfuse |
Bipolar MOS Transistor |
товар відсутній |
|
| MMIX4B22N300 | Виробник : IXYS |
Description: IGBT TRANS 3000V 38A Packaging: Tube Package / Case: 24-SMD Module, 9 Leads Mounting Type: Surface Mount Input: Standard Configuration: Full Bridge Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A NTC Thermistor: No Supplier Device Package: 24-SMPD Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 3000 V Power - Max: 150 W Current - Collector Cutoff (Max): 35 µA Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V |
товар відсутній |
||
| MMIX4B22N300 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT x4; BiMOSFET™; 3kV; 22A; 150W; SMPD Case: SMPD Topology: H-bridge Mounting: SMD Power dissipation: 150W Technology: BiMOSFET™ Gate charge: 110nC Kind of package: tube Features of semiconductor devices: high voltage Collector current: 22A Collector-emitter voltage: 3kV Pulsed collector current: 165A Type of transistor: IGBT x4 Turn-on time: 743ns Turn-off time: 1.87µs Gate-emitter voltage: ±20V |
товар відсутній |