MPSH11-D27Z

MPSH11-D27Z ON Semiconductor


mpsh11jp-d.pdf Виробник: ON Semiconductor
Trans RF BJT NPN 25V 0.05A 3-Pin TO-92 T/R
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Технічний опис MPSH11-D27Z ON Semiconductor

Description: RF TRANS NPN 25V 650MHZ TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 25V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V, Frequency - Transition: 650MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete.

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MPSH11_D27Z MPSH11_D27Z Виробник : onsemi mpsh11-d.pdf Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
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