Технічний опис MR852RLG ON Semiconductor
Description: DIODE GEN PURP 200V 3A AXIAL, Packaging: Tape & Reel (TR), Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: Axial, Operating Temperature - Junction: -65°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Інші пропозиції MR852RLG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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MR852RLG | Виробник : ON Semiconductor |
 Rectifier Diode Switching 200V 3A 300ns 2-Pin Case 267-03 T/R |
товар відсутній |
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MR852RLG | Виробник : onsemi |
Description: DIODE GEN PURP 200V 3A AXIAL Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товар відсутній |
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MR852RLG | Виробник : onsemi |
Description: DIODE GEN PURP 200V 3A AXIAL Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товар відсутній |