MSCSM120AM027CD3AG Microchip Technology
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 89850.87 грн |
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Технічний опис MSCSM120AM027CD3AG Microchip Technology
Description: SIC 2N-CH 1200V 733A D3, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.97kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 733A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 9mA, Supplier Device Package: D3, Part Status: Active.
Інші пропозиції MSCSM120AM027CD3AG за ціною від 70875.65 грн до 95014.79 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
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MSCSM120AM027CD3AG | Виробник : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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MSCSM120AM027CD3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
товар відсутній |
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MSCSM120AM027CD3AG | Виробник : Microchip Technology | 1200V/Phase Leg/SiC MOSFET Modules |
товар відсутній |
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MSCSM120AM027CD3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |