MSCSM120AM50CT1AG Microchip Technology
на замовлення 11 шт:
термін постачання 280-289 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6485.77 грн |
| 100+ | 5540.75 грн |
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Технічний опис MSCSM120AM50CT1AG Microchip Technology
Description: SIC 2N-CH 1200V 55A SP1F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 245W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, Vgs(th) (Max) @ Id: 2.7V @ 1mA, Supplier Device Package: SP1F, Part Status: Active.
Інші пропозиції MSCSM120AM50CT1AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MSCSM120AM50CT1AG | Виробник : Microchip Technology |
 Phase Leg SiC MOSFET Power Module |
товар відсутній |
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| MSCSM120AM50CT1AG | Виробник : Microchip Technology |
Phase Leg SiC MOSFET Power Module |
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| MSCSM120AM50CT1AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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MSCSM120AM50CT1AG | Виробник : Microchip Technology |
Description: SIC 2N-CH 1200V 55A SP1F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 245W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: SP1F Part Status: Active |
товар відсутній |
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| MSCSM120AM50CT1AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |