Технічний опис MT46V128M8P-6TITA micron
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP, Packaging: Tray, Package / Case: 66-TSSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 167 MHz, Memory Format: DRAM, Supplier Device Package: 66-TSOP, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції MT46V128M8P-6TITA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MT46V128M8P-6T IT:A | Виробник : E2V Aerospace and Defense(Teledyne) |
 DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray |
товар відсутній |
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| MT46V128M8P-6T IT:A | Виробник : E2V Aerospace and Defense(Teledyne) |
DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray |
товар відсутній |
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MT46V128M8P-6T IT:A | Виробник : Micron Technology |
DRAM Chip DDR SDRAM 1Gbit 128Mx8 2.5V 66-Pin TSOP |
товар відсутній |
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MT46V128M8P-6T IT:A | Виробник : Micron Technology Inc. |
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP Packaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товар відсутній |