Технічний опис NAND128W3A2BN6E
- FLASH NAND 128MB, SMD, TSOP48, 128
- Memory Type:Flash, NAND
- Interface Type:Parallel
- Memory Size:128Mbit
- Memory Configuration:16M x 8bit
- Read Cycle Time, tRC:50ns
- Page Size:528Byte
- Block Size:16896Byte
- Memory Voltage Vcc:3.3V
- Read/Write Cycles:4
- Min Supply Voltage:2.7V
- Max Supply Voltage:3.6V
- Termination Type:SMD
- Case Style:TSOP
- No. of Pins:48
- Operating Temperature Range:-40`C to + 85`C
- Access Time:12es
- Base Number:128
- Max Operating Temperature:85`C
- Min Temperature Operating:-40`C
- Voltage Vcc:3.3V
- Memory IC Case Style:TSOP
Інші пропозиції NAND128W3A2BN6E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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NAND128W3A2BN6E | Виробник : Micron Technology |
 SLC NAND Flash Parallel 3V/3.3V 128M-bit 16M x 8 12us 48-Pin TSOP Tray |
товар відсутній |
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NAND128W3A2BN6E | Виробник : Micron Technology Inc. |
Description: IC FLASH 128MBIT PARALLEL 48TSOP Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 48-TSOP Write Cycle Time - Word, Page: 50ns Memory Interface: Parallel Access Time: 50 ns Memory Organization: 16M x 8 DigiKey Programmable: Verified |
товар відсутній |