Технічний опис NE68519-T1-A NEC
Description: RF TRANS NPN 6V 12GHZ SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11dB, Power - Max: 125mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 6V, DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V, Frequency - Transition: 12GHz, Noise Figure (dB Typ @ f): 1.5dB @ 2GHz, Supplier Device Package: SOT-523.
Інші пропозиції NE68519-T1-A
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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NE68519-T1-A | Виробник : Renesas |
 Trans RF BJT NPN 6V 0.03A 3-Pin USMM T/R |
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NE68519-T1-A | Виробник : CEL |
Description: RF TRANS NPN 6V 12GHZ SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11dB Power - Max: 125mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Supplier Device Package: SOT-523 |
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NE68519-T1-A | Виробник : CEL |
Description: RF TRANS NPN 6V 12GHZ SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11dB Power - Max: 125mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Supplier Device Package: SOT-523 |
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NE68519-T1-A | Виробник : CEL |
RF Bipolar Transistors NPN High Frequency |
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