NGTB03N60R2DT4G

NGTB03N60R2DT4G ON Semiconductor


3721021442521595ngtb03n60r2dt4g-d.pdf Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R
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Технічний опис NGTB03N60R2DT4G ON Semiconductor

Description: IGBT 9A 600V DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 27ns/59ns, Switching Energy: 50µJ (on), 27µJ (off), Test Condition: 300V, 3A, 30Ohm, 15V, Gate Charge: 17 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 9 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 49 W.

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NGTB03N60R2DT4G NGTB03N60R2DT4G Виробник : onsemi Description: IGBT 9A 600V DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 27ns/59ns
Switching Energy: 50µJ (on), 27µJ (off)
Test Condition: 300V, 3A, 30Ohm, 15V
Gate Charge: 17 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 49 W
товар відсутній
NGTB03N60R2DT4G NGTB03N60R2DT4G Виробник : onsemi Description: IGBT 9A 600V DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 27ns/59ns
Switching Energy: 50µJ (on), 27µJ (off)
Test Condition: 300V, 3A, 30Ohm, 15V
Gate Charge: 17 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 49 W
товар відсутній
NGTB03N60R2DT4G NGTB03N60R2DT4G Виробник : onsemi NGTB03N60R2DT4G_D-2317830.pdf IGBT Transistors RC2 IGBT 3A 600V DPAK
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