Технічний опис NGTB20N120IHRWG ON Semiconductor
Description: IGBT TRENCH/FS 1200V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/235ns, Switching Energy: 450µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 225 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 384 W.
Інші пропозиції NGTB20N120IHRWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
NGTB20N120IHRWG Код товару: 151548 |
 Транзистори > IGBT |
товар відсутній
|
|||
 |
NGTB20N120IHRWG | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 40A 384000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
|
 |
NGTB20N120IHRWG | Виробник : onsemi |
Description: IGBT TRENCH/FS 1200V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/235ns Switching Energy: 450µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 225 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 384 W |
товар відсутній |
|
 |
NGTB20N120IHRWG | Виробник : onsemi |
IGBT Transistors 1200V/20A RC IGBT FSII |
товар відсутній |