Технічний опис NGTB25N120SWG ON Semiconductor
Description: IGBT 25A 1200V TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 154 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 87ns/179ns, Switching Energy: 1.95mJ (on), 600µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 178 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 385 W.
Інші пропозиції NGTB25N120SWG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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NGTB25N120SWG | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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NGTB25N120SWG | Виробник : onsemi |
Description: IGBT 25A 1200V TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 154 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Td (on/off) @ 25°C: 87ns/179ns Switching Energy: 1.95mJ (on), 600µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 178 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 385 W |
товар відсутній |