NGTB30N120IHRWG

NGTB30N120IHRWG ON Semiconductor


ngtb30n120ihr-d.pdf Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 384000mW 3-Pin(3+Tab) TO-247 Tube
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Технічний опис NGTB30N120IHRWG ON Semiconductor

Description: IGBT 1200V 60A 384W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/230ns, Switching Energy: 700µJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 225 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 384 W.

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NGTB30N120IHRWG NGTB30N120IHRWG Виробник : onsemi NGTB30N120IHRWG.pdf Description: IGBT 1200V 60A 384W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/230ns
Switching Energy: 700µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 384 W
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NGTB30N120IHRWG NGTB30N120IHRWG Виробник : onsemi NGTB30N120IHR_D-2317778.pdf IGBT Transistors 1200V/30A RC IGBT FSII
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