NGTB50N120FL2WG ON Semiconductor

Description: IGBT 1200V 100A 535W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 256 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 118ns/282ns, Switching Energy: 4.4mJ (on), 1.4mJ (off), Test Condition: 600V, 50A, 10Ohm, 15V, Gate Charge: 311 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 535 W.