NTBG030N120M3S onsemi
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
на замовлення 783 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1185.6 грн |
10+ | 1005.59 грн |
100+ | 869.69 грн |
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Технічний опис NTBG030N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V.
Інші пропозиції NTBG030N120M3S за ціною від 751.28 грн до 1269.4 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NTBG030N120M3S | Виробник : onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L |
на замовлення 964 шт: термін постачання 21-30 дні (днів) |
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NTBG030N120M3S | Виробник : ON Semiconductor | Silicon Carbide (SiC) MOSFET |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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NTBG030N120M3S | Виробник : onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V |
товар відсутній |